Characterization of Evaporated Cr-Si0 Cermet Films for Resistive-Gate CCD Applications
نویسنده
چکیده
Characterization of electron-beam evaporated Cr-Si0 films (cermet) useful for resistive-gate charge-coupled device (CCD) applications is reported. The films are evaporated from powder sources of different Cr-Si0 compositions. Auger electron spectroscopy (AES) depth profiling is carried out to measure the uniformity of the cermet composition. Electrical conduction in the cermet films is measured for temperatures ranging from 50 to 370 K, before and after annealing. The electrical characteristics of cermet/GaAs Schottky diodes are measured and compared with Cr/GaAs and AI/GaAs diodes. The effect of rapid thermal annealing (RTA) on the cermet/GaAs diodes and cermet films is investigated. A resistive-gate GaAs CCD delay line is fabricated and tested to demonstrate the performance of the evaporated Cr-Si0 cermet as a resistive material.
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تاریخ انتشار 2004